Title :
Bleaching dynamics of resonantly excited excitons in GaN thin films at room temperature
Author :
Gia-Wei Chern ; Yin-Chieh Huang ; Jian-Chin Liang ; Chi-Kuang Sun ; Keller, S. ; DenBaars, Steven P.
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Summary form only given. Through optical absorption measurement, exciton ionization has been observed in GaN epilayers up to room temperature. By using transmission-type pump probe measurement around the exciton transition energy, we report, to our knowledge, the first direct measurement of exciton ionization process in wurzite GaN.
Keywords :
III-V semiconductors; excitons; gallium compounds; optical saturable absorption; semiconductor epitaxial layers; time resolved spectra; wide band gap semiconductors; 20 C; GaN; GaN epilayers; GaN thin films; bleaching dynamics; exciton ionization; exciton transition energy; optical absorption; resonantly excited excitons; room temperature; transmission-type pump probe measurement; wurzite GaN; Bleaching; Energy measurement; Excitons; Gallium nitride; Ionization; Optical films; Optical pumping; Resonance; Temperature; Transistors;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034445
