Title :
Effect of Impurities Pinning on the Domains of PSTZT Ceramics
Author :
Shi, Wei ; Chen, Qiang ; Chen, Lin ; Huang, Wei ; Zhao, Yi ; Xiao, Dingquan ; Zhu, Jianguo
Author_Institution :
Sichuan Univ., Chengdu
Abstract :
(1-x)Pb(Sc0.5Ta0.5)O3-xPb(Zr0.52Ti0.48)O3 (PSTZT-100x) ceramics were prepared by using conventional oxide processing, and their piezoelectric and ferroelectric properties studied. The results of X-ray diffraction (XRD) suggest that PSTZT-100x ceramics formed a single-phase perovskite structure when 0.1=x=0.8. The ceramics exhibit relatively good piezoelectric and ferroelectric properties: piezoelectric constant, d33=117 pC/N; planar electromechanical coupling factor, kp=45%, remnant polarization, Pr=14 muC/cm2, coercive field, Ec=0.65 kV/mm. When x>0.70, the polarization-field hysteresis curves of PSTZT ceramics show "pinched" shapes instead of the normal square-like P-E loops when tested at room temperature and different frequency. In the meantime, the coercive field, polarization and internal bias field of PSTZT ceramics are strongly dependent on frequency or temperature. A defect pinning may induces the unsaturated hysteresis loop of PSTZT ceramics.
Keywords :
X-ray diffraction; dielectric hysteresis; dielectric polarisation; ferroelectric ceramics; impurities; lead compounds; piezoceramics; relaxor ferroelectrics; PSTZT ceramics; PbSc0.5Ta0.5O3-PbZr0.52Ti0.48O3; X-ray diffraction; coercive field; conventional oxide processing; defect pinning; domain structure; ferroelectric properties; impurities pinning; piezoelectric constant; piezoelectric properties; planar electromechanical coupling factor; polarization-field hysteresis curve; remnant polarization; single-phase perovskite structure; unsaturated hysteresis loop; Ceramics; Ferroelectric materials; Frequency; Hysteresis; Impurities; Piezoelectric polarization; Shape; Testing; X-ray diffraction; X-ray scattering; P-E loop; PSTPZT; pinched shape;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393265