Title :
Ultrafast intersubband electron relaxation at /spl sim/1.55 /spl mu/m wavelength in GaN/AlGaN quantum well structures
Author :
Heber, J.D. ; Gmachl, C. ; Ng, H.M. ; Cho, A.Y. ; Chu, S.-N.G.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
Summary from only given. We report on the first comparative study of room temperature intersubband (IS) scattering lifetimes in a variety of single and coupled double GaN/AlGaN MQW samples at different excitation powers and wavelengths. Furthermore, samples with two types of QW barriers are compared: bulk-like barriers (85% AlN mole fraction) and superlattice (SL) barriers (65% AlN mole fraction). All samples were grown by molecular beam epitaxy on sapphire substrates.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; molecular beam epitaxial growth; optical pumping; semiconductor quantum wells; semiconductor superlattices; 1.55 micron; AlN; GaN-AlGaN; GaN/AlGaN quantum well structures; QW barriers; bulk-like barriers; coupled double MQW samples; excitation powers; fs laser beams; mole fraction; molecular beam epitaxy; room temperature intersubband scattering lifetimes; sapphire substrates; single MQW samples; superlattice barriers; synchronous optical parametric oscillator; time resolved pump-probe technique; ultrafast intersubband electron relaxation; Absorption; Aluminum gallium nitride; Delay effects; Electrons; Excitons; Gallium nitride; Optical control; Optical polarization; Switches; Time measurement;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034447
