Title :
TiN metal hardmask etch residue removal with mask pullback and complete mask removal for Cu dual damascene device
Author_Institution :
DuPont/EKC Technol., DuPont Electron. Technol., Hayward, CA, USA
Abstract :
Formulations with TiN/Cu etch rate selectivity greater than 60 at 40°C for TiN pullback and 200 at 55°C for complete TiN mask removal, respectively, have been developed. The formulations are compatible with Cu, low-k and SiON materials, and prevent Cu re-oxidation.
Keywords :
copper compounds; integrated circuit technology; masks; oxidation; semiconductor technology; silicon compounds; sputter etching; titanium compounds; Cu; SiON; TiN; copper dual damascene device; etch rate selectivity; mask pullback; metal hardmask etch residue removal; reoxidation prevention; temperature 40 degC; temperature 55 degC; Cleaning; Compounds; Etching; Materials; Oxidation; Tin; Cu/low-k; Etch residue removal; TiN Metal hardmask; TiN etch; single wafer cleaning;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-4673-0350-7
DOI :
10.1109/ASMC.2012.6212916
