Title :
Nonlinear modelling of power FETs and HBTs
Author :
Snowden, Christopher M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
Large-signal modelling and simulation techniques for microwave and millimeter-wave transistors are described. The relative merits of physical, physics-based and non-linear equivalent circuit models are summarized
Keywords :
equivalent circuits; heterojunction bipolar transistors; microwave field effect transistors; microwave power transistors; millimetre wave bipolar transistors; millimetre wave power transistors; power bipolar transistors; power field effect transistors; semiconductor device models; large-signal modelling; microwave transistors; millimeter-wave transistors; nonlinear equivalent circuit model; nonlinear modelling; physical models; physics-based models; power FETs; power HBTs; simulation techniques; Equivalent circuits; FETs; Frequency; Heterojunction bipolar transistors; Impedance; Microwave oscillators; Microwave theory and techniques; Microwave transistors; Power amplifiers; Temperature distribution;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on
Conference_Location :
Duisburg
Print_ISBN :
0-7803-2409-9
DOI :
10.1109/INMMC.1994.512510
