DocumentCode :
2277029
Title :
Crystalline and Ferroelectric Properties of 0.68BiFeO3-0.32PbTiO3 Multiferroic Thin Film Prepared by Sol-Gel Method
Author :
Liang, Jin-e ; Liu, Juanni ; Jin, Yong ; Li, Jing ; Yu, Tian ; Xiao, Dinquan ; Zhu, Jianguo
Author_Institution :
Sichuan Univ., Chengdu
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
383
Lastpage :
385
Abstract :
0.68BiFeO3-0.32PbTiO3 (BFPT) films were prepared on SiO2/Si and Pt/Ti/SiO2/Si substrates by sol-gel method. The XRD patterns of BFPT films show that BFPT films have good crystalline properties, and there are no other peaks of impure phases except for the peaks of BFPT thin film and the substrates. The thickness of BFPT thin films that annealed at 600? for 10 min was about 860 nm when deposited 8 layers. The clear interface is observed between BFPT film and the substrate. The remanent polarization of BFPT was rather high, and the Pr value was about 70muC/cm2.
Keywords :
X-ray diffraction; bismuth compounds; dielectric polarisation; ferroelectric materials; ferroelectric thin films; lead compounds; multiferroics; sol-gel processing; BiFeO3-PbTiO3; Pt-Ti-SiO2-Si; Si; XRD; crystalline properties; ferroelectric properties; multiferroic thin film; remanent polarization; sol-gel method; time 10 min; Crystallization; Ferroelectric films; Ferroelectric materials; Iron; Lead compounds; Leakage current; Semiconductor films; Substrates; Temperature; Transistors; 0.68BiFeO3-0.32PbTiO3 films; ferroelectricity; sol-gel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2007.4393272
Filename :
4393272
Link To Document :
بازگشت