Title :
GaAs amplifiers for radar and mobile communication systems
Author :
Schopf, K.J. ; Pettenpaul, E.
Author_Institution :
Semicond. Group, Siemens AG, Munich, Germany
Abstract :
GaAs MMICs for frequency bands up to and above the X-band have been designed and manufactured in the planar DIOM process exhibiting not only performance data comparable to much higher cost processes but excellent uniformity and repeatability too. The application range for the supply voltage can vary from as low as 2.7 V to 12 V for receive and transmit circuits
Keywords :
III-V semiconductors; MMIC amplifiers; gallium arsenide; mobile communication; radar equipment; 2.7 to 12 V; GaAs; GaAs MMIC amplifiers; X-band; mobile communication systems; planar DIOM proces; radar systems; receive circuits; transmit circuits; Consumer electronics; Europe; FETs; Frequency; Gallium arsenide; MMICs; Mobile communication; Phased arrays; Radar; Research and development;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on
Conference_Location :
Duisburg
Print_ISBN :
0-7803-2409-9
DOI :
10.1109/INMMC.1994.512513
