A giant terahertz magneto-optical Kerr effect in InAs

Author

Shimano, R. ; Ino, Y. ; Svirko, Y.P. ; Gonokami, M.-K.

Author_Institution

Dept. of Appl. Phys., Univ. of Tokyo, Japan

fYear

2002

fDate

24-24 May 2002

Abstract

Summary form only given. We employ reflection type THz polarimetry for the quantitative measurement of the non-diagonal components of the dielectric tensor in InAs in the frequency range of 0.5-2.5 THz. The developed algorithm allows us to transform the polarization-sensitive waveform of the reflected terahertz pulses to the dielectric function of n-type InAs wafers under a magnetic field. Optical rectification and free space electro-optic (EO) sampling are used as a generation (1 mm ZnTe crystal) and detection (0.5 mm ZnTe crystal) scheme. A regenerative amplified Ti:sapphire laser of 150 kHz repetition rate, 200 fs autocorrelation width, is used as a light source.

Keywords

III-V semiconductors; Kerr magneto-optical effect; dielectric function; indium compounds; infrared spectra; polarimetry; submillimetre wave spectra; 0.5 to 2.5 THz; InAs; ZnTe; ZnTe crystal; dielectric function; dielectric tensor; free space electro-optic sampling; giant terahertz magneto-optical Kerr effect; n-type InAs; nondiagonal components; optical rectification; polarization-sensitive waveform; reflected terahertz pulses; reflection type THz polarimetry; regenerative amplified Ti:sapphire laser; Dielectric measurements; Frequency measurement; Kerr effect; Magnetic field measurement; Magnetooptic effects; Optical polarization; Optical reflection; Polarimetry; Tensile stress; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034456

Filename

1034456