Title :
A self-aligned double patterning technology using TiN as the sidewall spacer
Author :
Chiu, Yuan-Chieh ; Yu, Shu-Sheng ; Hsu, Fang-Hao ; Lee, Hong-Ji ; Lian, Nan-Tzu ; Yang, Tahone ; Chen, Kuang-Chao ; Lu, Chih-Yuan
Author_Institution :
Technol. Dev. Center, Macronix Int. Co., Ltd., Hsinchu, Taiwan
Abstract :
The TiN was conventionally used as barrier layers for both tungsten plug and AlCu metal lines. This paper reveals a novel back end of line (BEOL) self-aligned double patterning (SADP) technology, which applied TiN as a spacer material. The relative processes are introduced and discussed in detail. The new SADP approach was further applied for Cu damascene structure constructions in the advanced non-volatile memory (NVM).
Keywords :
etching; random-access storage; AlCu; SADP; TiN; back end of line; barrier layers; damascene structure; metal lines; nonvolatile memory; self-aligned double patterning technology; sidewall spacer; Flash memory; Lithography; Materials; Plasmas; Silicon compounds; Tin; Self-aligned Double Patterning (SADP); TiN spacer; damascene; oxide core; trench etch;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-4673-0350-7
DOI :
10.1109/ASMC.2012.6212922
