Title :
Wavelength conversion of 1.53 micron picosecond pulses in an ion-implanted multiple quantum well all-optical switch
Author :
Burr, E.P. ; Pantouvaki, M. ; Seeds, Alwyn J. ; Gwilliam, R.M. ; Pinches, S.M. ; Button, C.C.
Author_Institution :
Dept. of Electron. Eng., Univ. Coll. London, UK
Abstract :
Summary form only given. This is, to our knowledge, the first report of both all-optical wavelength conversion in an Fabry Perot saturable absorber (SA) incorporating an ion-bombarded MQW SA, and fast recovery through ion-bombardment in an InGaAsP/InGaAsP MQW. The measured contrast ratio and recovery time of our device, 10 dB and 4.1 ps respectively demonstrate its potential for 40 Gbps WDM system applications.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; ion implantation; optical communication equipment; optical saturable absorption; optical switches; optical wavelength conversion; semiconductor quantum wells; wavelength division multiplexing; 1.53 micron; 4.1 ps; Fabry Perot saturable absorber; InGaAsP-InGaAsP; InGaAsP/InGaAsP MQW; WDM system applications; all-optical wavelength conversion; contrast ratio; ion-bombarded MQW; ion-implanted multiple quantum well all-optical switch; optical wavelength conversion; picosecond pulses; Distributed Bragg reflectors; Optical pulses; Optical wavelength conversion; Pulse amplifiers; Pulse measurements; Quantum well devices; Reflectivity; Switches; Wavelength division multiplexing; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034458
