Title :
Modelling of bias dependent 1/f-noise in GaAs-MESFETs
Author :
Hanneberger, R. ; Roth, B. ; Beyer, A.
Author_Institution :
Gerhard-Mercator Univ., Duisburg, Germany
Abstract :
The building of a bias dependent model for 1/f-noise in GaAs-MESFETs is done in the following way: 1. Development of a program controlling the measurement system via the IEEE488-bus; 2. Measurement of an exemplary chosen MESFET manufactured by NEC in series production; 3. Elaboration of a mathematical model for the 1/f-noise proportionality factor with dependence on the bias point
Keywords :
1/f noise; III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; semiconductor device noise; 1/f-noise; GaAs; GaAs-MESFETs; bias dependent model; proportionality factor; Circuits; Fluctuations; Frequency domain analysis; Gallium arsenide; Harmonic analysis; Intelligent networks; MESFETs; Manufacturing; Mathematical model; Time domain analysis;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on
Conference_Location :
Duisburg
Print_ISBN :
0-7803-2409-9
DOI :
10.1109/INMMC.1994.512517
