Title :
Approach for developing a large signal model of a 150 GHz HEMT
Author :
Diskus, C.G. ; Bergamaschi, C. ; Schefer, M. ; Patrick, W. ; Klepser, B -U H ; Baechtold, W.
Author_Institution :
Lab. for Electromagnet. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T-gate of 0.25 μm footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP-MDS or Spice. The procedure results in an easily applicable model which produces very good fits to the measured S-parameters
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device models; 0.25 micron; 150 GHz; HEMT; HP-MDS; InAlAs-InGaAs-InP; S-parameters; Spice; T-gate; large signal model; nonlinear circuit simulation; simulator software; transistor; transit frequency; Circuit simulation; Circuit testing; Electrical resistance measurement; Electromagnetic fields; HEMTs; Laboratories; Predictive models; Scattering parameters; Solid modeling; Voltage;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on
Conference_Location :
Duisburg
Print_ISBN :
0-7803-2409-9
DOI :
10.1109/INMMC.1994.512518
