Approach for developing a large signal model of a 150 GHz HEMT

Author

Diskus, C.G. ; Bergamaschi, C. ; Schefer, M. ; Patrick, W. ; Klepser, B -U H ; Baechtold, W.

Author_Institution

Lab. for Electromagnet. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1994

fDate

5-7 Oct 1994

Firstpage

133

Lastpage

137

Abstract

In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T-gate of 0.25 μm footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP-MDS or Spice. The procedure results in an easily applicable model which produces very good fits to the measured S-parameters

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device models; 0.25 micron; 150 GHz; HEMT; HP-MDS; InAlAs-InGaAs-InP; S-parameters; Spice; T-gate; large signal model; nonlinear circuit simulation; simulator software; transistor; transit frequency; Circuit simulation; Circuit testing; Electrical resistance measurement; Electromagnetic fields; HEMTs; Laboratories; Predictive models; Scattering parameters; Solid modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on

Conference_Location

Duisburg

ISSN

0938-8028

Print_ISBN

0-7803-2409-9

Type

conf

DOI

10.1109/INMMC.1994.512518

Filename

512518