A nonlinear HEMT model for the design of frequency doubler and mixer circuits

Author

Hollmann, D. ; Baumann, G. ; Heilig, R. ; Schlechtweg, M.

Author_Institution

Alcatel SEL A, Pforzheim, Germany

fYear

1994

fDate

5-7 Oct 1994

Firstpage

139

Lastpage

144

Abstract

This paper presents a nonlinear transistor model for millimeter wave HEMT devices. The model has been implemented in both parameter extraction and commercial circuit simulation software. It takes into account the nonlinearities of the gate-source and the gate-drain capacitances, and it allows accurately modeling of the transconductance as a function of the gate-source voltage. The model has been validated using a large-signal measurement system. Several nonlinear circuits comprising frequency doublers, oscillators and mixers have been designed and the measured results are in good agreement to the nonlinear simulation

Keywords

HEMT circuits; circuit analysis computing; frequency multipliers; millimetre wave circuits; millimetre wave field effect transistors; millimetre wave frequency convertors; millimetre wave mixers; nonlinear network analysis; semiconductor device models; circuit simulation software; frequency doublers; gate-drain capacitance; gate-source capacitance; gate-source voltage; large-signal measurement; millimeter wave HEMT devices; mixers; nonlinear circuits; nonlinear transistor model; parameter extraction; transconductance; Capacitance; Circuit simulation; Frequency; HEMTs; Millimeter wave circuits; Millimeter wave devices; Millimeter wave transistors; Parameter extraction; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on

Conference_Location

Duisburg

ISSN

0938-8028

Print_ISBN

0-7803-2409-9

Type

conf

DOI

10.1109/INMMC.1994.512519

Filename

512519