Electrothermal modeling of multi-emitter heterojunction-bipolar-transistors (HBTs)

Author

Baureis, Peter

Author_Institution

Fraunhofer-Inst. for Integraed Circuits, Erlangen, Germany

fYear

1994

fDate

5-7 Oct 1994

Firstpage

145

Lastpage

148

Abstract

A large signal equivalent circuit model for multi-emitter HBTs is proposed. The model is based on the description of a single-emitter-finger HBT which includes the intrinsic transistor temperature as a variable simulation parameter. This single-emitter device is described by a four node representation using the additional fourth node to calculate the transistor´s pseudotemperature rise. The thermal coupling of the transistor elements is performed by thermal impedances. The model allows simulation of the thermally triggered collapse of the collector current at power densities greater than 10⁵ W/_cm2. The use of emitter ballasting resistors improves the homogeneous temperature distribution of the power device and leads to an increase of the collector current of about 30%

Keywords

equivalent circuits; heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; ballasting resistors; collector current; electrothermal modeling; heterojunction-bipolar-transistors; large signal equivalent circuit model; multi-emitter HBTs; power device; simulation; temperature distribution; thermal coupling; thermal impedances; thermally triggered collapse; Bipolar transistors; Circuit simulation; Electrothermal effects; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Temperature dependence; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on

Conference_Location

Duisburg

ISSN

0938-8028

Print_ISBN

0-7803-2409-9

Type

conf

DOI

10.1109/INMMC.1994.512520

Filename

512520