DocumentCode
2277190
Title
Study of Phase Transitions and Magnetoelectric Coupling of Laser Ablated BiFeO3 Thin Films by Raman Scattering
Author
Palai, R. ; Huhtinen, H. ; Valdes, R.M. ; Pagan, R. ; Katiyar, R.S.
Author_Institution
Univ. of Puerto Rico, San Juan
fYear
2007
fDate
27-31 May 2007
Firstpage
413
Lastpage
414
Abstract
Multiferroic epitaxial thin films of BiFeO3 were grown on (100) SrTiO3 substrates by pulsed laser deposition (PLD). The X-ray diffraction analysis shows that the films are highly c-axis oriented with high degree of crystallinity. The polarized Raman scattering shows the monoclinic structure of thin films at room temperature in contrary to the rhombohedral structure in the bulk and tetragonal and rhombohedral structure in the c-axis oriented thin films as reported earlier. The temperature variation (up to 1000degC) of Raman scattering reveals spin-phonon coupling around 370degC, the magnetic Neel temperature (TN). The disappearance of stronger Raman modes revealed the structural (ferroelectric to paraelectric) phase transition at around 820degC temperature (Tc). The observation of no softening of phonon modes indicates nonoconventional ferroelectric. We observed an intermediate phase between 820-950degC before the transition to a high-temperature cubic phase.
Keywords
Neel temperature; Raman spectra; X-ray diffraction; bismuth compounds; ferroelectric thin films; ferroelectric transitions; magnetic epitaxial layers; magnetoelectric effects; multiferroics; pulsed laser deposition; spin-phonon interactions; BiFeO3; Raman scattering; SrTiO3; X-ray diffraction; ferroelectric-paraelectric phase transition; high-temperature cubic phase; laser ablated thin films; magnetic Neel temperature; magnetoelectric coupling; multiferroic epitaxial thin films; phonon modes; pulsed laser deposition; spin-phonon coupling; temperature 293 K to 298 K; temperature 820 C to 950 C; Ferroelectric materials; Laser transitions; Optical coupling; Pulsed laser deposition; Raman scattering; Sputtering; Substrates; Temperature; Transistors; X-ray lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location
Nara
ISSN
1099-4734
Print_ISBN
978-1-4244-1334-8
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2007.4393282
Filename
4393282
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