Large-signal extraction method for GaAs and InP HEMT diodes

Author

Schreurs, D. ; Herrebout, S. ; Nauwelaers, B. ; De Raedt, W. ; Baeyens, Y. ; Van Rossum, M. ; Coady, M.

Author_Institution

ESAT, Katholieke Univ., Leuven, Heverlee, Belgium

fYear

1994

fDate

5-7 Oct 1994

Firstpage

159

Lastpage

164

Abstract

A HEMT diode model intended for analog applications should be valid over the whole gate-source voltage (T_gs) range. The main difficulty of extracting the small-signal equivalent scheme of a HEMT diode, is that, contrary to the transistor extraction method, no clear distinction can be made between the calculation of the extrinsic elements (cold-FET measurements) and the intrinsic elements (hot-FET measurements). This implies that approximations used in the cold-FET extraction approach have to be reviewed. This is a particular problem for the determination of the resistances

Keywords

III-V semiconductors; MIMIC; MMIC; electric resistance; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave diodes; millimetre wave diodes; semiconductor device models; EHF; GaAs; HEMT diodes; InP; SHF; analog applications; cold-FET extraction; diode model; gate-source voltage range; large-signal extraction method; resistances; Application specific processors; Capacitance; Electrical resistance measurement; Equivalent circuits; Gallium arsenide; HEMTs; Indium phosphide; Scattering parameters; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on

Conference_Location

Duisburg

ISSN

0938-8028

Print_ISBN

0-7803-2409-9

Type

conf

DOI

10.1109/INMMC.1994.512523

Filename

512523