DocumentCode
2277226
Title
Nonlinearities in a MESFET-distributed model
Author
Martin-Guerrero, T.M. ; Camacho-Penalosa, C.
Author_Institution
Dept. de Ingenieria de Comunicaciones, Malaga Univ., Spain
fYear
1994
fDate
5-7 Oct 1994
Firstpage
165
Lastpage
170
Abstract
A numerical optimization study of the nonlinear characteristics of a MESFET-distributed model is presented. It is shown that nonlinearities are present not only in the distributed conductance and capacitance element, but also in the resistance and inductance ones
Keywords
Schottky gate field effect transistors; capacitance; electric admittance; electric resistance; equivalent circuits; inductance; optimisation; semiconductor device models; MESFET distributed model; distributed capacitance element; distributed conductance element; inductance; nonlinear characteristics; nonlinearities; numerical optimization; resistance; Circuit simulation; Coupling circuits; Distributed parameter circuits; Equivalent circuits; Frequency; MESFET circuits; Power transmission lines; Scattering parameters; Transmission line matrix methods; Transmission line theory;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on
Conference_Location
Duisburg
ISSN
0938-8028
Print_ISBN
0-7803-2409-9
Type
conf
DOI
10.1109/INMMC.1994.512524
Filename
512524
Link To Document