Title :
Millimeterwave power amplifiers from 18 GHz to 70 GHz
Author :
Bourne-Yaonaba, P. ; Aubame, E. ; Chaumas, P. ; Crozat, P. ; Favre, J ; Fellon, P. ; Potteau, L. ; Quentin, P. ; Redon, T. ; Roux, P. ; Vernet, G.
Author_Institution :
Thomson-CSF Semicond. Specifiques, Orsay, France
Abstract :
A family of fully monolithic power amplifiers processed on a PM-HFET (Pseudomorphic Heterojunction FET) technology is presented. They operate in the 18 GHz to 70 GHz frequency range. The output powers vary between 18 dBm and 28 dBm according to the operating frequency. This paper describes their design, topology and exhibited performances
Keywords :
field effect MIMIC; millimetre wave amplifiers; millimetre wave power amplifiers; power amplifiers; 18 to 70 GHz; EHF; MIMIC; MM-wave IC; PM-HFET technology; millimeterwave power amplifiers; monolithic power amplifiers; pseudomorphic heterojunction FET; Admittance; Circuit noise; Coupling circuits; Frequency; Power amplifiers; Pulse amplifiers; Radiofrequency amplifiers; Semiconductor device noise; Semiconductor optical amplifiers; Topology;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on
Conference_Location :
Duisburg
Print_ISBN :
0-7803-2409-9
DOI :
10.1109/INMMC.1994.512527
