DocumentCode
2277287
Title
TSV RF de-embedding method and modeling for 3DIC
Author
Yen, Hsiao-Tsung ; Lin, Yu-ling ; Hu, Clark ; Jan, S.B. ; Hsieh, Chi-Chun ; Chen, M.F. ; Kuo, Chin-Wei ; Chen, Ho-Hsiang ; Jeng, Min-Chie
Author_Institution
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
fYear
2012
fDate
15-17 May 2012
Firstpage
394
Lastpage
397
Abstract
TSV (Thru-Silicon-Via) for 3D packaging technique is a further passive component, for connecting two dies by stacking. RF characteristics of TSV with modeling up to 50GHz are presented in this paper, where a L-2L de-embedding method (double delay) is in use, which is the first applied for TSV on-wafer measurement. Furthermore, a new T-model is proposed for modeling a single TSV of 28nm CMOS process.
Keywords
CMOS integrated circuits; integrated circuit packaging; radiofrequency integrated circuits; three-dimensional integrated circuits; 3D packaging technique; 3DIC; CMOS process; L-2L de-embedding method; T-model; TSV on-wafer measurement; die connecting; double delay; passive component; size 28 nm; thru-silicon-via RF deembedding method; Capacitance; Couplings; Integrated circuit modeling; Metals; Radio frequency; Substrates; Through-silicon vias; 3DIC; L-2L; Thru-Silicon-Via; de-embedding method;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location
Saratoga Springs, NY
ISSN
1078-8743
Print_ISBN
978-1-4673-0350-7
Type
conf
DOI
10.1109/ASMC.2012.6212934
Filename
6212934
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