Title :
A 29 GHz DRO in coplanar waveguide configuration with an AlGaAs HEMT
Author :
Baumann, Guido ; Hollmann, Detlev ; Heilig, Roland
Author_Institution :
Alcatel SEL, Pforzheim, Germany
Abstract :
A millimeter-wave GaAs HEMT MMIC oscillator at 29 GHz with a new linear and nonlinear HEMT model has been developed which is able to describe the single side source grounded configuration. The resonance frequency and output power has been predicted by the nonlinear simulation. The output power of the oscillator is greater than 6 dBm and with different dielectric resonators (DR´s) the oscillator can lock to resonance frequencies from 26.5 to 29.5 GHz. The active device is a AlGaAs-GaAs HEMT with a gatelength of 0.2 μm and a gatewidth of 2×40 μm
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC oscillators; aluminium compounds; coplanar waveguides; dielectric resonator oscillators; field effect MMIC; gallium arsenide; millimetre wave oscillators; 26.5 to 29.5 GHz; 29 GHz; AlGaAs; DRO; active device; coplanar waveguide; dielectric resonator; linear HEMT model; millimeter-wave AlGaAs HEMT MMIC oscillator; nonlinear HEMT model; nonlinear simulation; output power; resonance frequency; single side source grounded configuration; Coplanar waveguides; Dielectrics; Gallium arsenide; HEMTs; MMICs; Oscillators; Power generation; Predictive models; Resonance; Resonant frequency;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on
Conference_Location :
Duisburg
Print_ISBN :
0-7803-2409-9
DOI :
10.1109/INMMC.1994.512534
