A 29 GHz DRO in coplanar waveguide configuration with an AlGaAs HEMT

Author

Baumann, Guido ; Hollmann, Detlev ; Heilig, Roland

Author_Institution

Alcatel SEL, Pforzheim, Germany

fYear

1994

fDate

5-7 Oct 1994

Firstpage

237

Lastpage

242

Abstract

A millimeter-wave GaAs HEMT MMIC oscillator at 29 GHz with a new linear and nonlinear HEMT model has been developed which is able to describe the single side source grounded configuration. The resonance frequency and output power has been predicted by the nonlinear simulation. The output power of the oscillator is greater than 6 dBm and with different dielectric resonators (DR´s) the oscillator can lock to resonance frequencies from 26.5 to 29.5 GHz. The active device is a AlGaAs-GaAs HEMT with a gatelength of 0.2 μm and a gatewidth of 2×40 μm

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC oscillators; aluminium compounds; coplanar waveguides; dielectric resonator oscillators; field effect MMIC; gallium arsenide; millimetre wave oscillators; 26.5 to 29.5 GHz; 29 GHz; AlGaAs; DRO; active device; coplanar waveguide; dielectric resonator; linear HEMT model; millimeter-wave AlGaAs HEMT MMIC oscillator; nonlinear HEMT model; nonlinear simulation; output power; resonance frequency; single side source grounded configuration; Coplanar waveguides; Dielectrics; Gallium arsenide; HEMTs; MMICs; Oscillators; Power generation; Predictive models; Resonance; Resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on

Conference_Location

Duisburg

ISSN

0938-8028

Print_ISBN

0-7803-2409-9

Type

conf

DOI

10.1109/INMMC.1994.512534

Filename

512534