Influence of Zr/Ti Ratio on Electrical Properties of PZT Thick Films Deposited by Aerosol Deposition Process

Author

Hahn, B.D. ; Park, D.S. ; Choi, J.J. ; Ryu, J.H. ; Yoon, W.H. ; Kim, D.-Y.

Author_Institution

Department of Future Technology, Korea Institute of Machinery and Materials, 66 Sangnam-Dong, Changwon, Gyeong-Nam, 641-010, Korea

fYear

2007

fDate

27-31 May 2007

Firstpage

457

Lastpage

459

Abstract

Lead zirconate titanate (PZT) thick films with thickness of 10 Â¿m were deposited on silicon and sapphire substrates by aerosol deposition process at room temperature. The films with Zr/Ti ratio of 45/55, 52/48 and 60/40 were fabricated in order to investigate the effect of compositional modifications on the electrical properties of PZT thick films. Microscopic examination of the films revealed dense microstructures with no crack. After deposition, the films were annealed at 600, 700 and 900Â· Â·for 1h in an electric furnace. The annealed films showed markedly improved electrical properties in comparison with the as-deposited films. Relative dielectric constant was the highest for the PZT (52/48) film. As the Zr/Ti ratio was increased, the remanent polarization and the coercive field were decreased. PZT (52/48) film annealed at 900Â· Â·for 1h exhibited the best overall combination of electrical properties.

Keywords

Aerosols; Annealing; Microscopy; Microstructure; Silicon; Substrates; Temperature; Thick films; Titanium compounds; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara-city, Japan

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393297

Filename

4393297