Title :
Modeling and simulation of a SiC BJT
Author :
Gachovska, T.K. ; Du, B. ; Hudgins, J.L. ; Grekov, A. ; Bryant, A. ; Santi, E. ; Mantooth, H.A. ; Agarwal, A.
Author_Institution :
Dept. of Electr. Eng., Univ. of Nebraska, Lincoln, NE, USA
Abstract :
The objective of this study was to develop a physics-based model of a SiC BJT and verify its validity through experimental testing. Two physical models were considered: a lumped charge model and the Fourier series solution used to solve the ambipolar diffusion equation (ADE). These models were realized using Matlab and Simulink. The simulation and experimental results of static and switching waveforms are given.
Keywords :
Fourier series; bipolar transistor switches; diffusion; lumped parameter networks; power semiconductor switches; semiconductor device models; silicon compounds; wide band gap semiconductors; Fourier series solution; Matlab; SiC; Simulink; ambipolar diffusion equation; bipolar junction transistor simulation; lumped charge model; physics-based model; power semiconductor switches; silicon carbide power BJT modeling; static waveform; switching waveform; Fourier Series; Modeling; SiC BJT; Simulation;
Conference_Titel :
Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2893-9
Electronic_ISBN :
978-1-4244-2893-9
DOI :
10.1109/ECCE.2009.5316248
