DocumentCode
2277552
Title
Structural analysis in (100)/(001)-oriented epitaxial lead titanate thick films grown by MOCVD for MEMS application
Author
Nakaki, Hiroshi ; Ikariyama, Rikyu ; Kim, Yong Kwan ; Yokoyama, Shiyoshi ; Nishida, Ken ; Gruverman, Alexei ; Streiffer, Stephen ; Saito, Keisuke ; Funakubo, Hiroshi
Author_Institution
Tokyo Inst. of Technol., Yokohama
fYear
2007
fDate
27-31 May 2007
Firstpage
469
Lastpage
471
Abstract
(100)/(001)-oriented epitaxial PbTiO3 films were grown on (100) SrTiO3 and (100) Nb-SrTiO3 substrates by MOCVD. The detailed domain structure of these films was analyzed by X-ray diffraction pattern and piezoresponse force microscopy. In thick films (over 1.1 mum), much more complex domain structure has been observed compared to thin films. Domain structures of thick films consist of one kind of c-domains (c1 ) and three kinds of a-domains (a1 , a2 and a3 ). The tilting angles of a 2/a 3 and a1 /c1 boundaries are about 3.6deg which corresponds to the inclination angle given by geometric calculation, 2arctan(c/a)-90deg, where a and c are lattice parameters of strain-free state of PbTiO3 . Other domain boundaries, a2 /c1 and a1/a3, are strained ones with rotation, and have not been observed in thinner films. It is assumed that this complex domain structure was formed through the strain relaxation of thick PbTiO3 films.
Keywords
MOCVD; X-ray diffraction; domain boundaries; electric domains; epitaxial layers; ferroelectric thin films; lattice constants; lead compounds; micromechanical devices; scanning probe microscopy; stress relaxation; (100) Nb-SrTiO3 substrate; (100) SrTiO3 substrate; (100)/(001)-oriented epitaxial lead titanate thick films; MEMS; MOCVD; PbTiO3; SrNbTiO3; SrTiO3; X-ray diffraction; domain boundaries; domain structure; geometric calculation; lattice parameters; piezoresponse force microscopy; strain relaxation; strain-free state; structural analysis; tilting angles; Lead; MOCVD; Micromechanical devices; Microscopy; Pattern analysis; Substrates; Thick films; Titanium compounds; Transistors; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location
Nara
ISSN
1099-4734
Print_ISBN
978-1-4244-1334-8
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2007.4393301
Filename
4393301
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