DocumentCode :
2277565
Title :
Analysis of Size Effect in PZT Thin Film Capacitors
Author :
Bouregba, R. ; Le Rhun, G. ; Poullain, G. ; Leclerc, G.
Author_Institution :
Lab. CRISMAT-ENSICAEN, Caen
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
472
Lastpage :
475
Abstract :
The ferroelectric properties of Pt/PZT/Pt/TiO2/SiO2/Si thin film capacitors with different thicknesses are investigated. The degradation of the switching properties is fully reproduced by simulations including non ferroelectric space charge layers at both ferroelectric/electrode interfaces. Size effect is shown to arise from a mechanism of modulation of density and sign of the space charge.
Keywords :
ferroelectric switching; lead compounds; space charge; thin film capacitors; PZT; PZT thin film capacitors; ferroelectric properties; size effect; space charge layers; switching properties; Capacitors; Degradation; Dielectric thin films; Electrodes; Ferroelectric materials; Hysteresis; Permittivity; Polarization; Space charge; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2007.4393302
Filename :
4393302
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2277565
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