Title :
Analysis and study of electrical characteristics of through silicon via in 3D integration
Author :
He, Xiang ; Cao, Qunsheng
Author_Institution :
Coll. of Electron. & Inf. Eng., Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China
Abstract :
Since through silicon vias (TSVs) emerges as the key technology and essential components to enable 3D integration, it is of great importance to explore and investigate its electrical characteristics. In this paper, a 2-tier signal-ground TSV is studied in frequency domain using 3D full wave field solver. The impact of physical configurations and materials on TSV electrical performance is evaluated and analyzed in details.
Keywords :
frequency-domain analysis; integrated circuit interconnections; three-dimensional integrated circuits; 2-tier signal-ground TSV; 3D full wave field solver; 3D integration; TSV electrical performance; electrical characteristics; frequency domain; physical configuration; through silicon via; Conductivity; Copper; Silicon; Substrates; Three dimensional displays; Through-silicon vias;
Conference_Titel :
High Speed Intelligent Communication Forum (HSIC), 2012 4th International
Conference_Location :
Nanjing, Jiangsu
Print_ISBN :
978-1-4673-0678-2
Electronic_ISBN :
978-1-4673-0676-8
DOI :
10.1109/HSIC.2012.6212951
