DocumentCode
2277575
Title
Analysis and study of electrical characteristics of through silicon via in 3D integration
Author
He, Xiang ; Cao, Qunsheng
Author_Institution
Coll. of Electron. & Inf. Eng., Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China
fYear
2012
fDate
10-11 May 2012
Firstpage
1
Lastpage
4
Abstract
Since through silicon vias (TSVs) emerges as the key technology and essential components to enable 3D integration, it is of great importance to explore and investigate its electrical characteristics. In this paper, a 2-tier signal-ground TSV is studied in frequency domain using 3D full wave field solver. The impact of physical configurations and materials on TSV electrical performance is evaluated and analyzed in details.
Keywords
frequency-domain analysis; integrated circuit interconnections; three-dimensional integrated circuits; 2-tier signal-ground TSV; 3D full wave field solver; 3D integration; TSV electrical performance; electrical characteristics; frequency domain; physical configuration; through silicon via; Conductivity; Copper; Silicon; Substrates; Three dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
High Speed Intelligent Communication Forum (HSIC), 2012 4th International
Conference_Location
Nanjing, Jiangsu
Print_ISBN
978-1-4673-0678-2
Electronic_ISBN
978-1-4673-0676-8
Type
conf
DOI
10.1109/HSIC.2012.6212951
Filename
6212951
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