DocumentCode :
2277597
Title :
BCB (Benzocylcobutene) process integration for the RF passive device
Author :
Li, H.Y. ; Tang, M. ; Guo, L.H. ; Lo, G.Q.
Author_Institution :
Inst. of Microelectron., Singapore
fYear :
2006
fDate :
6-8 Dec. 2006
Firstpage :
40
Lastpage :
45
Abstract :
For the on-chip antenna (OCA) application, the authors successful integrate the radio frequency (RF) component (inductor) by the BCB interconnect. The electrical yield of BCB interconnect is more than 80%. The peak Q-value of the inductor that was integrated by BCB interconnects is 36 at frequency 7.78GHz. At the same time, the cost and process time are reduced to half. BCB can be used in the post-process for the RF passive integration.
Keywords :
electronics packaging; inductors; integrated circuit interconnections; microwave antennas; radiofrequency integrated circuits; 7.78 GHz; BCB interconnect; BCB process integration; RF passive device; RF passive integration post-process; benzocylcobutene; on-chip antenna application; radio frequency inductor; Annealing; Coatings; Costs; Dielectrics; Inductors; Packaging; Radio frequency; Sputter etching; Sputtering; System-on-a-chip;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference, 2006. EPTC '06. 8th
Conference_Location :
Singapore
Print_ISBN :
1-4244-0664-1
Electronic_ISBN :
1-4244-0665-X
Type :
conf
DOI :
10.1109/EPTC.2006.342688
Filename :
4147217
Link To Document :
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