Title :
Excellent Ferroelectricity of Thin Poly(Vinylidene Fluoride-Trifluoroetylene) Copolymer Films and Low Voltage Operation of Capacitors and Diodes
Author :
Fujisaki, Sumiko ; Fujisaki, Yoshihisa ; Ishiwara, Hiroshi
Author_Institution :
Tokyo Inst. of Technol., Yokohama
Abstract :
Characteristics of MFM (metal-ferroelectrics-metal) capacitors and MFIS (metal-ferroelectrics-insulator-semiconductor) diodes with P(VDF-TrFE) copolymer films thinner than 100 nm were investigated. The films were prepared by spin cast process and were annealed at 140degC in air for crystallization. The ferroelectric properties are equivalent to those of oxide ferroelectrics even under low voltage or high frequency operation.
Keywords :
MFIS structures; MIS devices; annealing; crystallisation; elemental semiconductors; ferroelectric capacitors; ferroelectric thin films; ferroelectricity; gold; polymer blends; polymer films; semiconductor diodes; silicon; silicon compounds; Au; MFIS diodes; MFM capacitors; SiO2-Si; annealing; crystallization; ferroelectric properties; ferroelectricity; low voltage operation; metal-ferroelectrics-insulator-semiconductor; metal-ferroelectrics-metal structure; spin casting; temperature 140 degC; thin poly(vinylidene fluoride trifluoroetylene) copolymer films; Capacitors; Dielectrics and electrical insulation; Diodes; Ferroelectric films; Ferroelectric materials; Flash memory; Low voltage; Magnetic field induced strain; Magnetic force microscopy; Polarization;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393307
