DocumentCode :
2277638
Title :
Development of thin film range resistors for high-voltage AC-DC transfer standards
Author :
Fujiki, H. ; Chiyoda, T.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
fYear :
2008
fDate :
8-13 June 2008
Firstpage :
228
Lastpage :
229
Abstract :
New thin-film range resistors have been developed at the National Metrology Institute of Japan (NMIJ) to reduce the voltage dependence of AC-DC transfer differences that have appeared in the processes of the step-up procedures over 300 V. The occurrence of voltage dependence is partly due to rising ambience temperature that may cause changes in the resistance of the resistor and the temperature dependence of the dielectric losses in the coating of the resistor. In order to avoid these problems, our new thin film heaters were directly sputtered on an AlN substrate and covered with SiO2 film. The material of the heater is a NiCrFeAl alloy, which has a low temperature coefficient of the resistor around room temperature. This paper describes the reduction of the voltage dependence of AC-DC transfer differences over 300 V by improving the design of the range resistors for high-voltage thermal voltage converters (TVCs).
Keywords :
aluminium alloys; chromium alloys; convertors; heating elements; iron alloys; nickel alloys; silicon compounds; sputtered coatings; thin film resistors; transfer standards; voltage measurement; AlN; NMIJ; National Metrology Institute of Japan; NiCrFeAl; SiO2; dielectric losses; high-voltage AC-DC transfer standards; high-voltage thermal voltage converter; resistor coating; sputtered film; temperature coefficient; temperature dependence; thin film heater; thin film range resistor; Dielectric losses; Dielectric substrates; Dielectric thin films; Metrology; Resistors; Standards development; Temperature dependence; Temperature distribution; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location :
Broomfield, CO
Print_ISBN :
978-1-4244-2399-6
Electronic_ISBN :
978-1-4244-2400-9
Type :
conf
DOI :
10.1109/CPEM.2008.4574736
Filename :
4574736
Link To Document :
بازگشت