Title :
Narrow-band bandpass filter with enhanced Q and selectivity based on coupled negative resistance
Author :
Wang, Ling ; You, Changjiang ; Ge, Chuan ; Zhu, Xiaowei
Author_Institution :
State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
Abstract :
This paper proposes a novel narrow-band bandpass filter with relative 3dB bandwidth of less than 1% and enhanced selectivity by utilizing negative resistance. The HEMT device is employed to realize the negative resistance with a common-source and drain inductance and capacitance feedback structure. Q-enhancement is accomplished by the negative resistance coupled to other resonators. The measured results show that the fabricated active filter has a relative 3dB bandwidth of 0.9% and insertion loss of 0.37dB. Moreover, the skirt of the filter is sharpened and the selectivity is enhanced by using the negative resistance.
Keywords :
HEMT circuits; active filters; band-pass filters; capacitance; resonator filters; HEMT device; Q-enhancement; active filter; capacitance feedback structure; common-source; coupled negative resistance; drain inductance; loss 0.37 dB; narrow-band bandpass filter; resonator; Band pass filters; Bandwidth; Inductors; Microstrip filters; Resistance; Resonator filters; HEMT; Narrow-band filter; active filter; bandpass filter; negative resistance;
Conference_Titel :
High Speed Intelligent Communication Forum (HSIC), 2012 4th International
Conference_Location :
Nanjing, Jiangsu
Print_ISBN :
978-1-4673-0678-2
Electronic_ISBN :
978-1-4673-0676-8
DOI :
10.1109/HSIC.2012.6212964
