Title :
A smooth and derivable large-signal model for microwave HEMT transistors
Author :
Lázaro, M. ; Santamaría, I. ; Pantaleón, C.
Author_Institution :
Dept. Ing. de Comunicaciones, Cantabria Univ., Santander, Spain
Abstract :
In this paper we present the Smoothed Piecewise Linear (SPWL) model as a useful tool for device modeling problems. The SPWL model is an extension of the well-known canonical piecewise linear model proposed by Chua, which substitutes the abrupt absolute value function for a smoothing function (the logarithm of hyperbolic cosine). This function makes the model derivable; moreover the smoothness of the global model can be controlled by means of a single smoothing parameter. The parameters of the model are adapted to fit the nonlinear function, while the smoothing parameter is selected according to derivative constraints. The proposed SPWL model is successfully applied to model a microwave HEMT transistor under optical illumination using real measurements
Keywords :
high electron mobility transistors; microwave field effect transistors; piecewise linear techniques; semiconductor device models; abrupt absolute value function; derivative constraints; global model; large-signal model; microwave HEMT transistors; nonlinear function; optical illumination; smoothed piecewise linear model; Function approximation; HEMTs; Microwave devices; Microwave transistors; Neural networks; Nonlinear optical devices; Piecewise linear approximation; Piecewise linear techniques; Predictive models; Smoothing methods;
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
DOI :
10.1109/ISCAS.2000.858851
