Analytical model for DC characteristics of GaN MESFET under dark and illuminated conditions

Author

Adarsh ; Bose, Srikanta ; Gupta, Mridula ; Gupta, R.S.

Author_Institution

Semicond. Devices Res. Lab., Univ. of Delhi South Campus, New Delhi, India

Volume

2

fYear

2001

fDate

3-6 Dec. 2001

Firstpage

712

Abstract

A simple analytical model to show the DC characteristics for a non-self-aligned GaN MESFET under dark and illuminated conditions is developed. The model considers the effect of bias dependent parasitic source and drain resistances along with the channel length modulation. The transconductance of the device is evaluated and the theoretically predicted results in dark condition are in good agreement with the experimental data. The model being analytical and simple, can be suitably implemented for both electrical and optical applications.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium compounds; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; DC characteristics; GaN; MESFET; analytical model; bias dependent parasitic source; channel length modulation; dark conditions; drain resistances; electrical applications; illuminated conditions; microwave applications; optical applications; transconductance; Analytical models; Electron mobility; Gallium nitride; Laboratories; MESFETs; Optical saturation; Photonic band gap; Postal services; Semiconductor devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific

Conference_Location

Taipei, Taiwan

Print_ISBN

0-7803-7138-0

Type

conf

DOI

10.1109/APMC.2001.985471

Filename

985471