DocumentCode :
2277926
Title :
TCAD driven drain engineering for hot carrier reduction of 3.3V I/O p-MOSFET
Author :
Miura, N. ; Hayashi, H. ; Komatsubara, H. ; Mochizuki, M. ; Fukuda, K.
Author_Institution :
Syst. LSI Res. Div., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fYear :
2002
fDate :
2002
Firstpage :
47
Lastpage :
50
Abstract :
We present a TCAD driven hot carrier reduction methodology of 3.3V I/O p-MOSFETs design. The drain structures are successfully optimized in short time by applications of TCAD local models. Considering tradeoffs between hot carrier injection (HCI) and ION, HALO/SDE of both core and I/O transistors can be totally optimized for photo-mask reduction.
Keywords :
MOSFET; hot carriers; semiconductor device breakdown; semiconductor device models; technology CAD (electronics); 3.3 V; I/O PMOSFET; TCAD; drain structures; hot carrier injection; hot carrier reduction; local models; photo-mask reduction; Calibration; Charge carrier processes; Degradation; Design optimization; Drain avalanche hot carrier injection; Electron traps; Hot carrier injection; Hot carriers; Human computer interaction; MOSFET circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
Type :
conf
DOI :
10.1109/SISPAD.2002.1034513
Filename :
1034513
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2277926
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