An extended RF non-linear model for power prediction of AlGaAs/InGaAs pHEMT´s

Author

Lin, Chen-Kuo ; Chan, Yi-Jen

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan

Volume

2

fYear

2001

fDate

3-6 Dec. 2001

Firstpage

722

Abstract

A modified Curtice non-linear model for pHEMTs, capable of modeling the current-voltage characteristics, drain-source resistances, gate-source and gate-drain capacitances, is developed. Parameter extraction is based on dual delta-doped pseudomorphic HEMTs on GaAs substrates. Measured and modeled dc I-V, S-parameters, and power performance are compared and demonstrate a great improvement from conventional non-linear models.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; capacitance; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device models; AlGaAs-InGaAs; AlGaAs/InGaAs pHEMT; GaAs; GaAs substrates; S-parameters; current-voltage characteristics; delta-doped pseudomorphic HEMTs; drain-source resistance; extended RF nonlinear model; gate-drain capacitance; gate-source capacitance; modified Curtice nonlinear model; parameter extraction; power performance; Capacitance; Current-voltage characteristics; Electrical resistance measurement; Gallium arsenide; Indium gallium arsenide; PHEMTs; Parameter extraction; Power measurement; Predictive models; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific

Conference_Location

Taipei, Taiwan

Print_ISBN

0-7803-7138-0

Type

conf

DOI

10.1109/APMC.2001.985473

Filename

985473