Title :
Circuit-simulation model of gate-drain-capacitance changes in small-size MOSFETs due to high channel-field gradients
Author :
Navarro, D. ; Hisamitsu, K. ; Yamaoka, T. ; Tanaka, M. ; Kawano, H. ; Ueno, H. ; Miura-Mattausch, M. ; Mattausch, H.J. ; Kumashiro, S. ; Yamaguchi, T. ; Yamashita, K. ; Nakayama, N.
Author_Institution :
Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
The field gradient along the MOSFET channel is included in the modeling of the gate-drain capacitance (Cgd) by an induced capacitance approach. The new approach has been successfully implemented in surface-potential based model HiSIM (Hiroshima-university STARC IGFET Model) and is capable of reproducing measured effects, which are particularly significant for pocket-implant technology, accurately.
Keywords :
MOSFET; capacitance; semiconductor device models; surface potential; Hiroshima university STARC IGFET model; circuit-simulation model; field gradient; gate-drain-capacitance; high channel-field gradients; induced capacitance approach; modeling; pocket-implant technology; small-size MOSFETs; surface potential based model HiSIM; Analytical models; Capacitance; Circuits; Costs; FETs; Implants; MOSFETs; Medical simulation; Particle measurements; Radio frequency;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034514
