Title :
Estimation of dielectric response equivalent circuit parameters of transformers using QPSO
Author :
Zhang, Tao ; Ma, Feilin ; Li, Donghui ; Wang, Linyun
Author_Institution :
Coll. of Electr. Eng. & New Energy, China Three Gorges Univ., Yichang, China
Abstract :
The initial slope of return voltage is not only an important characteristic quantity to assess insulation aging, but also of great significance to estimate the parameters of equivalent circuit based on linear dielectric response theory. This paper establishes a mathematical model with the data of initial slope for estimating circuit parameters, which is a group of nonlinear equations with exponential function. It is difficult to solve the problem using nonlinear least square optimization method. The most advantage of QPSO based on swarm intelligence is that it does not require any prior knowledge or space limitations and has very good performance on the complex problems. Therefore, this paper presents the QPSO to solve the parameters estimation problem. Based on estimated parameters, we can calculate the RVM curves from the equivalent circuit and compare the calculated data with the measured. The result shows that the established model is feasible and effective. It provides a new idea for assessment of insulation aging and research on new characteristic quantity.
Keywords :
ageing; dielectric properties; equivalent circuits; nonlinear equations; parameter estimation; particle swarm optimisation; power transformer insulation; QPSO; RVM curves; dielectric response equivalent circuit parameter estimation; insulation aging assessment; linear dielectric response theory; mathematical model; nonlinear equations; nonlinear least square optimization method; quantum behaved particle swarm optimization; return voltage initial slope; swarm intelligence; transformers; Dielectrics; Equivalent circuits; Insulation; Mathematical model; Particle swarm optimization; Power transformer insulation;
Conference_Titel :
High Voltage Engineering and Application (ICHVE), 2012 International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-4747-1
DOI :
10.1109/ICHVE.2012.6357112