DocumentCode :
2278025
Title :
Flux-grown PZN-PT Single Crystals for High-performance Piezo Devices
Author :
Lim, L.C. ; Rajan, K.K. ; Jin, J.
Author_Institution :
Nat. Univ. of Singapore, Singapore
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
568
Lastpage :
571
Abstract :
Large-size Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) single crystals of different PT contents were successfully grown using an improved flux growth technique. Measurements made from samples of different orientation cuts revealed that PZN-(6-7)%PT single crystals exhibit exceptional dielectric and electromechanical properties. When poled in [001] direction, these crystals yield KT ap 7000, d33 ap 2800 pC/N and k33 ges 0.92. For [011]-cut crystals, optimally poled PZN-7%PT single crystal exhibits very high transverse piezoelectric properties with d32 ap -3800 pC/N, k32 > 0.90 and KT ges 5000, while PZN-6%PT has d32 ap -3000 pC/N and comparable k32 and KT values but a high overpoling field of >2.0 kV/mm. In comparison with melt-grown PMN-PT single crystals, flux-grown PZN-PT single crystals show good compositional homogeneity, superior and consistent dielectric and electromechanical properties, and higher depolarisation temperatures.
Keywords :
crystal growth from solution; dielectric depolarisation; electromechanical effects; lead compounds; piezoelectric materials; PZN-PT single crystals; PbZn0.33Nb0.66O3-PbTiO3; depolarisation; dielectric properties; electromechanical properties; flux growth; transverse piezoelectric properties; Crystals; Dielectric constant; Dielectric measurements; Impedance measurement; Lead; Materials science and technology; Scattering; Solids; Temperature; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2007.4393331
Filename :
4393331
Link To Document :
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