Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications

Author

Ueno, H. ; Jinbou, S. ; Kawano, H. ; Morikawa, K. ; Nakayama, N. ; Miura-Mattausch, A. ; Mattausch, H.J.

Author_Institution

Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2002

fDate

2002

Firstpage

71

Lastpage

74

Abstract

A non-quasistatic MOSFET model for the small-signal response is developed by including the continuity equation in an analytical way. This model developed based on the drift-diffusion approximation enables us to predict the high-frequency response for any bias conditions. Our result shows that the quasistatic approximation calculates the response approximately correct up to f_T/2, which is much higher than the f_T/10 previously estimated.

Keywords

MOSFET; current density; diffusion; microwave field effect transistors; semiconductor device models; RF-MOSFET applications; bias conditions; continuity equation; current density equation; drift-diffusion approximation; drift-diffusion-based modeling; high-frequency response; nonquasistatic small-signal response; Capacitance; Circuit simulation; Current density; Cutoff frequency; Equivalent circuits; Intrusion detection; MOSFET circuits; Poisson equations; Predictive models; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on

Print_ISBN

4-89114-027-5

Type

conf

DOI

10.1109/SISPAD.2002.1034519

Filename

1034519