Title :
Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications
Author :
Ueno, H. ; Jinbou, S. ; Kawano, H. ; Morikawa, K. ; Nakayama, N. ; Miura-Mattausch, A. ; Mattausch, H.J.
Author_Institution :
Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
A non-quasistatic MOSFET model for the small-signal response is developed by including the continuity equation in an analytical way. This model developed based on the drift-diffusion approximation enables us to predict the high-frequency response for any bias conditions. Our result shows that the quasistatic approximation calculates the response approximately correct up to fT/2, which is much higher than the fT/10 previously estimated.
Keywords :
MOSFET; current density; diffusion; microwave field effect transistors; semiconductor device models; RF-MOSFET applications; bias conditions; continuity equation; current density equation; drift-diffusion approximation; drift-diffusion-based modeling; high-frequency response; nonquasistatic small-signal response; Capacitance; Circuit simulation; Current density; Cutoff frequency; Equivalent circuits; Intrusion detection; MOSFET circuits; Poisson equations; Predictive models; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034519
