Atomic layer deposited alumina (Al2O3) coating on thin film cryoresistors

Author

Hahtela, O. ; Satrapinski, A. ; Sievila, P. ; Chekurov, N.

Author_Institution

MIKES, Espoo

fYear

2008

fDate

8-13 June 2008

Firstpage

272

Lastpage

273

Abstract

Metal alloy (NiCrCuAlGe) thin film resistors were coated with atomic layer deposited (ALD) alumina (Al₂O₃) in order to improve the stability and repeatability of the high value resistors (100 kOmega - 500 kOmega) in the temperature range from 4.2 K to 300 K. The drift rate of the resistance due to the native oxidation at room temperature was reduced from -2.45 ppm/h for an uncoated resistor to 0.03 ppm/h for an alumina-coated resistor. It was shown that the additional alumina coating does not significantly change the thermoelectrical properties of the metal alloy thin film resistors.

Keywords

alumina; aluminium alloys; atomic layer deposition; chromium alloys; coating techniques; copper alloys; germanium alloys; metallic thin films; nickel alloys; protective coatings; thin film resistors; NiCrCuAlGe-Al₂O₃; atomic layer deposited alumina coating; metal alloy thin film resistors; native oxidation; resistance 100 kohm to 500 kohm; temperature 4.2 K to 300 K; thermoelectrical properties; thin film cryoresistors; Aluminum alloys; Atomic layer deposition; Coatings; Oxidation; Resistors; Sputtering; Stability; Temperature distribution; Thermoelectricity; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on

Conference_Location

Broomfield, CO

Print_ISBN

978-1-4244-2399-6

Electronic_ISBN

978-1-4244-2400-9

Type

conf

DOI

10.1109/CPEM.2008.4574758

Filename

4574758