DocumentCode :
2278124
Title :
A 20GS/s low-power BiCMOS comparator using an active inductor load
Author :
Kuai Yin ; Qiao Meng ; Kai Tang ; Yi Zhang
Author_Institution :
Inst. of RF - & OE-ICs, Southeast Univ., Nanjing, China
fYear :
2012
fDate :
10-11 May 2012
Firstpage :
1
Lastpage :
4
Abstract :
A 20GS/s BiCMOS latched comparator for highspeed, low-power Analog-to-Digital Converter (ADC) is proposed. The resister load of conventional current-steering comparator is replaced by an active inductor load made by a MOS transistor and a resister. This solution extends the bandwidth of the circuit without excessive power dissipation. Implemented in 0.35μm SiGe BiCMOS technology, this comparator only occupies a die area of 97×67 μm2 with a power dissipation of 31 mW from a 3.3-V power supply. Operating with an input frequency of 2 GHz, the circuit can oversample up to 20 GS/s with 4 bits of resolution; while operating at Nyquist, the comparator can sample up to 20 GS/s with 3 bits resolution. This design achieves a considerable trade-off between power, speed and resolution.
Keywords :
analogue-digital conversion; comparators (circuits); inductors; integrated circuit design; low-power electronics; silicon compounds; MOS transistor; SiGe; active inductor load; current-steering comparator; design; frequency 2 GHz; low-power BiCMOS latched comparator; low-power analog-to-digital converter; resister load; size 0.35 mum; voltage 3.3 V; Active inductors; BiCMOS integrated circuits; Heterojunction bipolar transistors; Latches; Silicon germanium; Simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Intelligent Communication Forum (HSIC), 2012 4th International
Conference_Location :
Nanjing, Jiangsu
Print_ISBN :
978-1-4673-0678-2
Electronic_ISBN :
978-1-4673-0676-8
Type :
conf
DOI :
10.1109/HSIC.2012.6212984
Filename :
6212984
Link To Document :
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