Title :
Uniformity of electron pumping regime in two GaAs tunable-barrier pumps
Author :
Giblin, S.P. ; Blumenthal, M.D. ; Janssen, T.J.B.M. ; Pepper, M.
Author_Institution :
Nat. Phys. Lab., Teddington
Abstract :
We show that quantised tunable-barrier electron pumping can be implemented in two different samples of GaAs device using the same control parameters. This is an important step towards the realization of a parallel pump architecture for generating quantised currents of up to 10 nA.
Keywords :
III-V semiconductors; charge pump circuits; gallium arsenide; parallel architectures; semiconductor devices; GaAs; parallel pump architecture; quantised currents; quantised tunable-barrier electron pumping; Cryogenics; Electrons; Fabrication; Frequency; Gallium arsenide; Laboratories; Quantum dots; Uncertainty; Voltage; Wire;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location :
Broomfield, CO
Print_ISBN :
978-1-4244-2399-6
Electronic_ISBN :
978-1-4244-2400-9
DOI :
10.1109/CPEM.2008.4574762
