A novel CDM-like discharge effect during human body model (HBM) ESD stress

Author

Axelrad, V. ; Huh, Y. ; Chen, J.W. ; Bendix, P.

Author_Institution

SEQUOIA Design Syst., Woodside, CA, USA

fYear

2002

fDate

2002

Firstpage

115

Lastpage

118

Abstract

Interactions between ESD protection devices and other components of a chip can lead to complex and not easily anticipated discharge behaviour. Triggering of a protection MOSFET is equivalent to the closing of a fast switch and can cause substantial transient discharge currents. The peak value of this current depends on the chip capacitance, resistance, properties of the protection clamp, etc. Careful optimization of the protection circuit is therefore necessary to avoid current overstress and circuit failure.

Keywords

MOSFET; electrostatic discharge; integrated circuit modelling; overvoltage protection; semiconductor device models; CDM-like discharge effect; ESD protection devices; charge device model-like discharge effect; chip capacitance; circuit failure; current overstress; electrostatic discharge; fast switch closing; human body model ESD stress; protection MOSFET triggering; protection clamp; resistance; Biological system modeling; Capacitance; Clamps; Electrostatic discharge; Humans; Immune system; MOSFET circuits; Protection; Stress; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on

Print_ISBN

4-89114-027-5

Type

conf

DOI

10.1109/SISPAD.2002.1034530

Filename

1034530