DocumentCode
2278273
Title
Simulation technique of heating by contact resistance for ESD protection device
Author
Matsuzawa, K. ; Kawashima, H. ; Matsuhashi, T. ; Yasuda, S.
Author_Institution
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
fYear
2002
fDate
2002
Firstpage
119
Lastpage
122
Abstract
An appropriate treatment of the contact resistance in device simulation is presented for the purpose of studying thermal immunity of ESD protection devices. The technique presented allows the appropriate resistivity and power density to be provided at the contact. The validity of the power density around the contact is checked by Monte Carlo simulation. Using the technique, influence of the contact resistance on self-heating in an ESD protection device is simulated.
Keywords
MOSFET; Monte Carlo methods; contact resistance; electrostatic discharge; semiconductor device models; ESD protection device; Monte Carlo simulation; heating by contact resistance; power density; self-heating; simulation technique; thermal immunity; Conductivity; Contact resistance; Electrostatic discharge; Heat treatment; Lattices; Protection; Resistance heating; Silicides; Temperature distribution; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN
4-89114-027-5
Type
conf
DOI
10.1109/SISPAD.2002.1034531
Filename
1034531
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