Title :
A 3.5 GHz antiparallel diode pair mixer in GaN-on-Si HEMT technology
Author :
Yeh, Chih-Sheng ; Kao, Hsuan-ling ; Ke, Jiun-Yi ; Wang, Bo-Wen ; Cho, Cheng-Lin ; Chiu, Hsien-Chin ; Chang, Li-Chun
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
This paper presents a 3.5 GHz antiparallel diode pair mixer using a 0.35 μm GaN-on-Si HEMT technology. The antiparallel diode pair mixer has a conversion gain of -17.2 dB at 3.5 GHz. The LO-to-RF, LO-to-IF, and RF-to-IF isolation are -47.9, -34.8 and -27.5 dB at 3.5 GHz, respectively. The measured P1dB and third-order intercept point (IIP3) are +7 dBm and +17 dBm, respectively. The mixer occupies a chip area, including probing pads, of 0.9 mm2.
Keywords :
HEMT integrated circuits; MMIC mixers; gallium compounds; silicon; GaN-Si; HEMT technology; MMIC mixers; antiparallel diode pair mixer; conversion gain; frequency 3.5 GHz; gain -17.2 dB; size 0.35 mum; third-order intercept point; Aluminum gallium nitride; Gallium nitride; HEMTs; Mixers; Radio frequency; Silicon; Substrates;
Conference_Titel :
High Speed Intelligent Communication Forum (HSIC), 2012 4th International
Conference_Location :
Nanjing, Jiangsu
Print_ISBN :
978-1-4673-0678-2
Electronic_ISBN :
978-1-4673-0676-8
DOI :
10.1109/HSIC.2012.6213000
