The body driven low phase noise injection-locked V-band push-push complementary-Colpitts oscillator

Author

Chu, Chia-Yi ; Ke, Bo-Yu ; Chiu, Hsien-Chin

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2012

fDate

10-11 May 2012

Firstpage

1

Lastpage

2

Abstract

An injection-locked push-push oscillator is developed for millimeter-wave signal source. A V-band push-push CMOS voltage controlled oscillator (VCO) is proposed in this study. A new core complementary Colpitts structure was adopted in a 90 nm CMOS process of FET induced capacitance of LC tank. The measured phase noise at 1 MHz offset is at 59 GHz. The power consumption of the VCO core is only 28.8 mW. The total chip size is 0.719 × 0.633 mm².

Keywords

CMOS analogue integrated circuits; field effect transistors; millimetre wave oscillators; phase locked oscillators; phase noise; CMOS process; FET induced capacitance; LC tank; V-band push-push CMOS voltage controlled oscillator; VCO; frequency 59 GHz; phase noise injection-locked V-band push-push complementary-Colpitts oscillator; power 28.8 mW; power consumption; size 90 nm; CMOS integrated circuits; Injection-locked oscillators; Phase noise; Power generation; Voltage-controlled oscillators; Wireless communication; CMOS; Colpitts; Injection-locked; V-band; push-push; voltage controlled oscillator (VCO);

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Intelligent Communication Forum (HSIC), 2012 4th International

Conference_Location

Nanjing, Jiangsu

Print_ISBN

978-1-4673-0678-2

Electronic_ISBN

978-1-4673-0676-8

Type

conf

DOI

10.1109/HSIC.2012.6213001

Filename

6213001