DocumentCode :
2278407
Title :
Impact of electron heat conductivity on electron energy flux
Author :
Matsuzawa, K.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
fYear :
2002
fDate :
2002
Firstpage :
147
Lastpage :
150
Abstract :
Equations in the hydrodynamic model were evaluated by direct calculation of the drift, diffusion, and scattering terms obtained by separating the motion of particles in Monte Carlo simulations. It was confirmed that the conservation equations for momentum and energy were constructed adequately. However, it was found that an artificial operation was necessary for describing the energy flux equation. Namely, the parameter of the Wiedemann-Franz law for heat conductivity could be chosen so that the underestimations of the drift and diffusion terms in the energy flux equation cancelled each other. It is shown that this parameter influences the electron temperature in a 50 nm gate nMOSFET.
Keywords :
MOSFET; Monte Carlo methods; Wiedemann-Franz law; semiconductor device models; thermal conductivity; 50 nm; 50 nm gate nMOSFET; Monte Carlo simulations; Wiedemann-Franz law; diffusion; drift; electron energy flux; electron heat conductivity; energy conservation equations; energy flux equation; heat conductivity; hydrodynamic model; momentum conservation equations; particles motion; scattering; Boltzmann equation; Conductivity; Electrons; Hydrodynamics; Laboratories; Large scale integration; Particle scattering; Scattering parameters; Steady-state; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
Type :
conf
DOI :
10.1109/SISPAD.2002.1034538
Filename :
1034538
Link To Document :
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