• DocumentCode
    2278407
  • Title

    Impact of electron heat conductivity on electron energy flux

  • Author

    Matsuzawa, K.

  • Author_Institution
    Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    147
  • Lastpage
    150
  • Abstract
    Equations in the hydrodynamic model were evaluated by direct calculation of the drift, diffusion, and scattering terms obtained by separating the motion of particles in Monte Carlo simulations. It was confirmed that the conservation equations for momentum and energy were constructed adequately. However, it was found that an artificial operation was necessary for describing the energy flux equation. Namely, the parameter of the Wiedemann-Franz law for heat conductivity could be chosen so that the underestimations of the drift and diffusion terms in the energy flux equation cancelled each other. It is shown that this parameter influences the electron temperature in a 50 nm gate nMOSFET.
  • Keywords
    MOSFET; Monte Carlo methods; Wiedemann-Franz law; semiconductor device models; thermal conductivity; 50 nm; 50 nm gate nMOSFET; Monte Carlo simulations; Wiedemann-Franz law; diffusion; drift; electron energy flux; electron heat conductivity; energy conservation equations; energy flux equation; heat conductivity; hydrodynamic model; momentum conservation equations; particles motion; scattering; Boltzmann equation; Conductivity; Electrons; Hydrodynamics; Laboratories; Large scale integration; Particle scattering; Scattering parameters; Steady-state; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
  • Print_ISBN
    4-89114-027-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2002.1034538
  • Filename
    1034538