DocumentCode
2278500
Title
Nanoelectronic 3-D (NEMO 3-D) simulation of multimillion atom quantum dot systems
Author
Oyafuso, Fabiano ; Klimeck, Gerhard ; Bowen, R.Chris ; Boykin, Timothy B.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2002
fDate
2002
Firstpage
163
Lastpage
166
Abstract
The convergence of electron and hole ground states of a dome-shaped In0.6Ga0.4As quantum dot as a function of the size of the surrounding buffer is explored within an sp3d5s* tight binding model. It is found that although the quantum dot encompasses only 2 × 105 atoms, proper convergence of ground state eigenenergies requires that over 10 times as many atoms need to be included in the simulation domain. It is also found that the disorder-induced broadening is very sensitive to the applied boundary conditions. Examination of local eigenenergies as functions of position shows similar convergence problems and indicates that an inaccurate resolution of the equilibrium atomic positions due to truncation of the simulation domain may be the source of the slow ground state convergence.
Keywords
III-V semiconductors; convergence; gallium arsenide; ground states; indium compounds; semiconductor quantum dots; tight-binding calculations; In0.6Ga0.4As; NEMO 3-D; boundary conditions; buffer size; convergence; disorder-induced broadening; dome-shaped In0.6Ga0.4As quantum dot; electron ground states; ground state eigenenergies; hole ground states; local eigenenergies; multimillion atom quantum dot systems; nanoelectronic 3-D simulation; sp3d5s* tight binding model; Boundary conditions; Charge carrier processes; Computational modeling; Convergence; Electronic mail; Laboratories; Propulsion; Quantum dots; Stationary state; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN
4-89114-027-5
Type
conf
DOI
10.1109/SISPAD.2002.1034542
Filename
1034542
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