• DocumentCode
    2278500
  • Title

    Nanoelectronic 3-D (NEMO 3-D) simulation of multimillion atom quantum dot systems

  • Author

    Oyafuso, Fabiano ; Klimeck, Gerhard ; Bowen, R.Chris ; Boykin, Timothy B.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    163
  • Lastpage
    166
  • Abstract
    The convergence of electron and hole ground states of a dome-shaped In0.6Ga0.4As quantum dot as a function of the size of the surrounding buffer is explored within an sp3d5s* tight binding model. It is found that although the quantum dot encompasses only 2 × 105 atoms, proper convergence of ground state eigenenergies requires that over 10 times as many atoms need to be included in the simulation domain. It is also found that the disorder-induced broadening is very sensitive to the applied boundary conditions. Examination of local eigenenergies as functions of position shows similar convergence problems and indicates that an inaccurate resolution of the equilibrium atomic positions due to truncation of the simulation domain may be the source of the slow ground state convergence.
  • Keywords
    III-V semiconductors; convergence; gallium arsenide; ground states; indium compounds; semiconductor quantum dots; tight-binding calculations; In0.6Ga0.4As; NEMO 3-D; boundary conditions; buffer size; convergence; disorder-induced broadening; dome-shaped In0.6Ga0.4As quantum dot; electron ground states; ground state eigenenergies; hole ground states; local eigenenergies; multimillion atom quantum dot systems; nanoelectronic 3-D simulation; sp3d5s* tight binding model; Boundary conditions; Charge carrier processes; Computational modeling; Convergence; Electronic mail; Laboratories; Propulsion; Quantum dots; Stationary state; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
  • Print_ISBN
    4-89114-027-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2002.1034542
  • Filename
    1034542