Title :
Wigner transport through tunneling structures scattering interpretation of the potential operator
Author :
Nedjalkov, M. ; Kosik, R. ; Kosina, H. ; Selberherr, S.
Author_Institution :
Inst. fur Microelectron., Technische Univ. Wien, Austria
Abstract :
A stochastic method for simulation of quantum transport in nanoscale electronic devices is proposed. The interaction with the Wigner potential is interpreted as a scattering mechanism, which is a counterpart to the scattering mechanisms due to the lattice imperfections. The derived quantum Monte Carlo algorithm retains the basic features of the Single Particle Monte Carlo method used for simulation of classical devices. The method is applied for simulation of tunneling process through energy barriers.
Keywords :
Monte Carlo methods; semiconductor device models; tunnelling; Single Particle Monte Carlo method; Wigner transport; derived quantum Monte Carlo algorithm; nanoscale electronic devices; potential operator; scattering mechanism; tunneling structures; Fourier transforms; Integral equations; Lattices; Microelectronics; Monte Carlo methods; Nanoscale devices; Particle scattering; Phonons; Stochastic processes; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034548
