Title :
Simulation of a "Well Tempered" SOI MOSFET using an enhanced hydrodynamic transport model
Author :
Gritsch, M. ; Kosina, H. ; Grasser, T. ; Selberherr, Siegfried
Author_Institution :
Inst. fur Microelectron., Technische Univ. Wien, Austria
Abstract :
Anomalous output characteristics are observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not observed in drift-diffusion simulations and its occurrence in measurements is questionable. An explanation of the cause of this effect is given, and a solution is proposed by modifying the hydrodynamic transport model. Successful simulations of different SOI Devices including a "Well Tempered" SOI MOSFET are presented.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; anomalous output characteristics; drain current; enhanced hydrodynamic transport model; simulation; well tempered SOI MOSFET; Computational modeling; Current measurement; Equations; High definition video; Hot carriers; Hydrodynamics; MOSFET circuits; Microelectronics; Ocean temperature; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034550
