Title :
The process modeling hierarchy: connecting atomistic calculations to nanoscale behavior
Author :
Dunham, Scott T.
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
Abstract :
In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation.
Keywords :
Monte Carlo methods; VLSI; density functional theory; integrated circuit modelling; semiconductor process modelling; DFT calculations; VLSI process simulation; atomistic calculations; kinetic lattice Monte-Carlo approach; nanoscale behavior; process modeling hierarchy; Bismuth; Boron; Circuit simulation; Fabrication; Ion implantation; Joining processes; Kinetic theory; Monte Carlo methods; Nanoscale devices; Very large scale integration;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034555
