Title :
Monte Carlo simulation of consecutive implants into SiO2 capped Si
Author :
Li, Di ; Yang, Shyh-Horng ; Machala, Chuck ; Lin, Li ; Tasch, Al F. ; Hornung, B. ; Li-Fatou, Andrei ; Banerjee, Sanjay K.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
The low energy as-implanted profile is very sensitive to the cap oxide layer thickness and PAI conditions. In this work, theoretical and experimental studies have been carried out quantitatively to investigate these dependencies. Using ZBL pair-specific inter-atomic potentials in the Monte Carlo ion implantation simulator, UT-MARLOWE, consecutive implants of PAI and PLDD were simulated and above effects were accurately captured.
Keywords :
Monte Carlo methods; elemental semiconductors; integrated circuit modelling; ion implantation; semiconductor device models; semiconductor doping; silicon; silicon compounds; Monte Carlo ion implantation simulator; Monte Carlo simulation; PAI conditions; Si-SiO2; SiO2 capped Si; UT-MARLOWE; ZBL pair-specific inter-atomic potentials; cap oxide layer thickness; consecutive implants; low energy as-implanted profile; Artificial intelligence; Circuit simulation; Electrons; Instruments; Ion implantation; Microelectronic implants; Monte Carlo methods; Nuclear electronics; Predictive models; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034556
